|
Material Composition
|
Typical Purity
|
Melting Point
C
|
Density
|
Targets
|
Evap.
Material
|
E-Beam
Starter Source
|
Suggested
Applications/Notes
|
Aluminum
Al
|
99%
99.9999%
|
660
|
2.7
|
X
|
X
|
X
|
Conducive file in IC's.
High reflectivity from surface mirrors and reflectors on glass
|
Antimony
Sb
|
99.9999%
|
630.5
|
6.62
|
X
|
X
|
X
|
Semiconducting Films.
|
Arsenic
As
|
99%
99.99%
99.999%
|
817
|
5.72
|
X
|
X
|
X
|
Toxic. Semicomductor. Diffusion
layer.
|
Barium
Ba
|
99.5%
|
714
|
3.5
|
X
|
X
|
X
|
Wets w/o alloying-reacts
with ceramics.
|
Bismuth
Bi
|
99.5%
99.999%
|
271.3
|
9.8
|
X
|
X
|
X
|
Ferromagnetic and resistive
thin films.
|
Boron
B
|
99.9%
|
-2030
|
2.34
|
X
|
X
|
X
|
Semiconductor. Diffusion
Layer.
|
Calcium
Ca
|
99%
|
838
|
1.55
|
X
|
X
|
X
|
Corrodes in air.
|
Cadmium
Cd
|
99.5%
99.999%
|
320.9
|
8.65
|
X
|
X
|
X
|
Dielectric thin film. For
metalizing paper, etc.
|
Carbon
C
|
99.5%
99.999%
|
3727g
|
2.26
|
X
|
X
|
X
|
Poor film adhesion.
|
Cerium
Ce
|
99.9%
|
795
|
6.67
|
X
|
X
|
X
|
Film oxidizes easily
|
Cesium
Cs
|
99.95%
|
28.7
|
1.9
|
|
X
|
X
|
|
Chromium
Cr
|
99%-99.99%
|
1875
|
7.18
|
X
|
X
|
X
|
Excellent adhering film
on substrates. Deposited on glass for printed circuit base. Co-deposit with
SiO for resistor films
|
Cobalt
Co
|
99.8%
|
1495
|
8.9
|
X
|
X
|
X
|
Ferromagnetic thin films.
|
Copper
Cu
|
99.9%
99.999%
|
1083
|
8.96
|
X
|
X
|
X
|
Junction films in integrated
circuits. Contacts.
|
Dysprosium
Dy
|
99.9%
|
1407
|
8.54
|
|
X
|
X
|
|
Erbium
Er
|
99.9%
|
1497
|
9.05
|
|
X
|
X
|
|
Europium
Eu
|
99.9%
|
826
|
5.26
|
|
X
|
X
|
|
Gadolinium
Gd
|
99.9%
|
1312
|
7.89
|
|
X
|
X
|
|
Germanium
Ge
|
99.999%
|
937.4
|
5.32
|
X
|
X
|
X
|
High index film in infrared
filters.
|
Gold
Au
|
99.9%
99.99%
|
1063
|
19.3
|
X
|
X
|
X
|
Contacts. Highly reflective
films.
|
Hafnium
Hf
|
99.9%
|
2222
|
13.1
|
X
|
X
|
X
|
Dielectric. Interference
layers.
|
Holmium
Ho
|
99.9%
|
1461
|
8.8
|
X
|
X
|
X
|
|
Indium
In
|
99.99%
99.999%
|
156.2
|
7.31
|
X
|
X
|
X
|
Superconducting films. Transistor
contacts, diodes.
|
Iridium
Ir
|
99.8%
|
2454
|
22.5
|
X
|
X
|
X
|
|
Iron
Fe
|
99.9%
|
1536
|
7.86
|
X
|
X
|
X
|
Magnetic and memory elements.
Ferromagnetic thin films.
|
Lanthanum
La
|
99.9%
|
920
|
6.17
|
X
|
X
|
X
|
|
Lead
Pb
|
99.9%
99.99%
|
327.4
|
11.4
|
X
|
X
|
X
|
Semiconducting films. Cryogenic
applications.
|
Magnesium
Mg
|
99.9%
99.99%
|
650
|
1.74
|
X
|
X
|
X
|
Diffusion with bismuth on
glass to form ferromagnetic films.
|
Manganese
Mn
|
99.9%
|
1245
|
7.43
|
X
|
X
|
X
|
Contacts for semiconductors.
Adherence film.
|
Molybdenum
Mo
|
99.95%
|
2610
|
10.2
|
X
|
X
|
X
|
Contacts. Hard, smooth film.
Multilayer circuits.
|
Neodymium
Nd
|
99.9%
|
1024
|
7
|
X
|
X
|
X
|
|
Nickel
Ni
|
99.99%
99.995%
|
1453
|
8.9
|
X
|
X
|
X
|
Ferromagnetic films. Memory
elements.
|
Niobium
Nb
|
99.95%
|
2415
|
8.4
|
X
|
X
|
X
|
Anodic films for rectification.
|
Palladium
Pd
|
99.95%
|
1552
|
12
|
X
|
X
|
X
|
Corrosion sesistant
contacts.
|
Plantinum
Pt
|
99.9%
99.99%
|
1769
|
21.4
|
X
|
X
|
X
|
Corrosion resistant contacts.
Co-evaporate with Si.
|
Praseodymium
Pr
|
99.9%
|
935
|
6.77
|
X
|
X
|
X
|
Fine wire will self evaporate.
|
Rhenium
Re
|
99.99%
|
3180
|
21
|
X
|
X
|
X
|
Contacts.
|
Rhodium
Rh
|
99.8%
|
1966
|
12.4
|
X
|
X
|
X
|
|
Rubidium
Rb
|
99.8%
|
38.9
|
1.53
|
X
|
X
|
X
|
|
Ruthenium
Ru
|
99.5%
|
2500
|
12.2
|
X
|
X
|
|
Corrosion resistant contacts.
|
Samarium
Sm
|
99.9%
|
1072
|
7.54
|
X
|
X
|
X
|
|
Scandium
Sc
|
99.9%
|
1539
|
3
|
X
|
X
|
X
|
|
Selenium
Se
|
99.999%
|
217
|
4.79
|
X
|
X
|
X
|
Photoconductive and rectifier
films.
|
Silicon
Si
|
99.999%
|
1410
|
2.33
|
X
|
X
|
X
|
Mechanical and chemical
resistant coating. Interference filter.
|
Silver
Ag
|
99.9%
99.99%
|
960.8
|
10.5
|
X
|
X
|
X
|
Reflective film. Conductive
contacts. Bonding layer.
|
Stainless Steel
SS
|
304,316
|
|
|
X
|
X
|
X
|
|
Strontium
Sr
|
98%
|
768
|
2.6
|
X
|
X
|
X
|
Wets but does not alloy
with refractory metals. May react violently with air.
|
Tantalum
Ta
|
99.5%
|
2996
|
16.4
|
X
|
X
|
X
|
Superconductor. Thin film
capacitor.
|
Tellurium
Te
|
99.999%
|
449.5
|
6.24
|
X
|
X
|
X
|
Blocking contact in thin
film devices.
|
Terbium
Tb
|
99.9%
|
1356
|
8.27
|
X
|
X
|
X
|
|
Thallium
TI
|
99.999%
|
303
|
11.85
|
|
X
|
X
|
Wets freely, very toxic.
|
Thorium
Th
|
99.8%
|
1750
|
11.7
|
|
X
|
X
|
Toxic, radioactive.
|
Thulium
Tm
|
99.9%
|
1545
|
9.33
|
|
X
|
X
|
|
Tin
Sn
|
99.999%
|
231.9
|
7.3
|
X
|
X
|
X
|
Cryogenic switching devices.
|
Titanium
Ti
|
99%-99.995%
|
1668
|
4.51
|
X
|
X
|
X
|
Deposited film oxidized
to TiO2 as beam splitter or insulator.
|
Tungsten
W
|
99.95%
|
3410
|
3410
|
X
|
X
|
X
|
Contacts. Hard, adherent
film.
|
Vanadium
V
|
99.8%
|
1900
|
6.1
|
X
|
X
|
X
|
Co-evaporate with SiO for
resistor films.
|
Ytterbium
Yb
|
99.9%
|
1509
|
4.47
|
X
|
X
|
X
|
|
Zinc
Zn
|
99.9%
|
419.5
|
7.14
|
X
|
X
|
X
|
Capacitor dielectric films.
For metalizing paper, etc.
|
Zriconium
Zr
|
99.9%-99.999%
|
1852
|
6.49
|
X
|
X
|
X
|
Interference filter. On
tungsten field emission characteristics.
|
