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Borides


A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

 

Material
Composition

Typical Purity

Melting Point 
C

Density

Targets

 Evap.
Material

E-Beam Starter Source

Notes

Chromium-
Boride
CrB2
               99.5%
                842
               4.356
               X
               X
               X
               See notes below.
Hafnium Boride
HfB2
99.5%
3250
 
X
X
X
See notes below.
Lanthanum Boride
LaB6
99.5%
2210
2.61
X
X
X
See notes below.
Molybdenum Boride
Mo2B, MoB
99.5%
 
9.26
8.65
X
X
X
See notes below.
Niobium Boride
NbB2, NbB
99.5%
2900
6.97
X
X
X
See notes below.
Tantalum Boride
TaB2
99.5%
3000
 
X
X
X
See notes below.
Tantalum
Boride
TaB2
99.5%
2900
 
X
X
X
See notes below.
Tungsten Boride
WB, W2B
99.5%
 
4.5
X
X
X
See notes below.
Vanadium Boride
VB2
99.5%
2400
5.10
X
X
X
See notes below.
Zirconium Boride
ZrB2
99.5%
3040
6.085
X
X
X
See notes below.

 
 
Borides in general are used for wear-resistant films and to produce semiconducting films.  Titanium boride and zirconium boride films increase the life of cutting tools.  Lanthanum boride films are thermionic conductors.  Boride films provide neutron-absorbing layers on nuclear fuel pellets.  Borides are being investigated for use as diffusion barriers in both silicon and III-V device technology in multilevel metallization schemes involving aluminum as a second level.


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